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P45N02LD P45N02LD 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
45A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.022Ω/Ohm @5A,4.5V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
1-2V |
耗散功率Pd
Power Dissipation |
90W |
Description & Applications |
N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N02 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. 45A, 20V RDS(ON) = 0.022? Temperature compensating PSPICE model Be driven directly from CMOS, NMOS, and TTL circuits Peak current vs. pulse width curve |
描述与应用 |
N沟道 增强模式 说明 由于N沟道功率MOSFET是专为UTP45N02 使用中的应用,如开关稳压器,开关 转换器,电机驱动器和继电器驱动器。 温度补偿的PSPICE型 直接驱动CMOS,NMOS,和TTL电路 峰值电流与脉冲宽度曲线 |
技术文档PDF下载 |
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