PBSS2515VS 6N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA |
| 截止频率fT
Transtion Frequency(fT) |
420MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
150mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? 15 V low VCE(sat) NPN double transistor ? 300 mW total power dissipation ? Very small 1.6 × 1.2 mm ultra thin package ? Excellent coplanarity due to straight leads ? Low collector-emitter saturation voltage ? High current capability ? Improved thermal behaviour due to flat lead ? Replaces two SC-75/SC-89 packaged low VCEsat transistors on same PCB area ? Reduces required PCB area ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and muting ? Low frequency driver circuits ? LCD backlighting ? Audio frequency general purpose amplifier applications ? Battery driven equipment (mobile phones, video cameras and hand-held devices). |
| 描述与应用 |
特点 ?15伏的低VCE（sat）的双晶体管NPN ?300 mW的总功耗 ?非常小的1.6×1.2毫米的超薄封装 ?优秀的共面性，由于直引线 ?低集电极 - 发射极饱和电压 ?高电流能力 ?改进的热行为由于扁平引脚 ?替代两个SC-75/SC-89包装相同的PCB面积上的晶体管的低VCEsat ?减少所需PCB面积 ?减少取放成本。 应用 ?通用开关和静音 ?低频驱动电路 ?LCD背光 ?音频通用放大器应用 ?电池驱动设备（手机，摄像机和手持设备）。 |
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