PBSS3515VS 35 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-15V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
280MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
150 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-150mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? 15 V low VCE(sat) PNP double transistor ? 300 mW total power dissipation ? Very small 1.6 × 1.2 mm ultra thin package ? Self alignment during soldering due to straight leads ? Low collector-emitter saturation voltage ? High current capability ? Improved thermal behaviour due to flat leads ? Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area ? Reduces required PCB area ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and muting ? Low frequency driver circuits ? LCD backlighting ? Audio frequency general purpose amplifier applications ? Battery driven equipment (mobile phones, video cameras and hand-held devices) |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?15伏的低VCE（sat）的PNP双晶体管 ?300 mW的总功耗 ?非常小的1.6×1.2毫米的超薄封装 ?自对准直引线在焊接过程中，由于 ?低集电极 - 发射极饱和电压 ?高电流能力 ?改进的热行为由于平坦的线索， ?替换两个SC75/SC89包装相同的PCB面积上的晶体管的低VCEsat ?减少所需PCB面积 ?减少取放成本。 应用 ?通用开关和静音 ?低频驱动电路 ?LCD背光 ?音频通用放大器应用 ?电池驱动设备（手机，摄像机和手持设备） |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
|
| 描述与应用 |
|
| 技术文档PDF下载 |
在线阅读  |
