PBSS4320T ZG 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
集电极连续输出电流IC
Collector Current(IC) |
2A |
截止频率fT
Transtion Frequency(fT) |
100MHz |
直流电流增益hFE
DC Current Gain(hFE) |
220 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
70mV~310mV |
耗散功率Pc
Power Dissipation |
1.2W |
Description & Applications |
20 V NPN low VCEsat (BISS) transistor FEATURES ? Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat ? High collector current capability ? High collector current gain ? Improved efficiency due to reduced heat generation. APPLICATIONS ? Power management applications ? Low and medium power DC/DC convertors ? Supply line switching ? Battery chargers ? Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package |
描述与应用 |
20 V NPN低VCEsat(BISS)晶体管 特点 ?低集电极 - 发射极饱和电压VCE监测 ?和 相应的低RCEsat的 ?高集电极电流能力 ?高集电极电流增益 ?由于产生的热量减少,提高了效率。 应用 ?电源管理应用 ?低功率和中功率DC/ DC转换器 ?供电线路开关 ?电池充电器 ?线性电压调节,低电压降 (LDO)。 说明 NPN低VCEsat ?在SOT23塑料封装晶体管 |
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