PDTA114EK 3 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
30 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.25W/250mW |
| Description & Applications |
FEATURES ? PNP resistor-equipped transistors ? Built-in bias resistors ? Simplified circuit design ? Reduction of component count ? Reduced pick and place costs. APPLICATIONS ? General purpose switching and amplification ? Inverter and interface circuits ? Circuit driver. |
| 描述与应用 |
特点 ?PNP电阻配备晶体管 ?内置偏置电阻 ?简化电路设计 ?减少元件数量 ?减少取放成本。 应用 ?通用开关和放大 ?逆变器和接口电路 ?电路驱动。 |
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