PEMD10 D1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? PNP/PNP resistor-equipped transistors; ? 300 mW total power dissipation ? Very small 1.6 × 1.2 mm ultra thin package ? Excellent coplanarity due to straight leads ? Replaces two SC-75/SC-89 packaged transistors on same PCB area ? Reduces required PCB area ? Reduced pick and place costs |
| 描述与应用 |
特点 ?PNP / PNP电阻配备晶体管; ?300 mW的总功耗 ?非常小的1.6×1.2毫米的超薄封装 ?优秀的共面性，由于直引线 ?替换两个SC-75/SC-89包装相同的PCB面积上的晶体管 ?减少所需PCB面积 ?减少取放成本 |
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