PMBFJ176 W6S 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30 V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
30 V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
－2.0~－35.0mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
1.0~4.0V |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
PMBFJ176 P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections. |
| 描述与应用 |
PMBFJ176 P-沟道硅场效应晶体管 说明 硅对称p沟道结场效应晶体管的塑料超小型SOT23封装。他们的目的是为应用模拟开关，换向器等采用SMD技术。比较特别的是漏极和源极连接的互换性。 |
| 技术文档PDF下载 |
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