RN1111FS XM 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
300 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.05W/50mW |
| Description & Applications |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ?Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. ? Complementary to RN2110FS, RN2111FS |
| 描述与应用 |
开关，逆变电路，接口电路， 驱动器电路应用 ?将偏置电阻晶体管，减少了部件数量 减少部件数量，能够制造更加 紧凑的设备和降低装配成本。 ?互补RN2110FS，RN2111FS |
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