RN1607 XH 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.21 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.21 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) ? Including two devices in SM6 (super-mini-type with six (6) leads) ? With built-in bias resistors ? Simplified circuit design ? Reduced number of parts and manufacturing process ? Complementary to RN2607 to RN2609 APPLICATIONS ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管）包括两个设备在SM6（超迷你型六（6）导致） ?借助内置的偏置电阻 ?简化电路设计 ?数量减少零部件和制造工艺 ?互补RN2607 RN2609 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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