RN1965 XXE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.047 |
| Q2基极输入电阻R1
Input Resistance(R1) |
2.2KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.047 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) ? Including two devices in US6 (ultra super mini type with 6 leads) ? With built-in bias resistors ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process ? Complementary to RN2961 to RN2966 APPLICATIONS ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管） ?包括两个设备US6（超超级迷你型6引线） ?借助内置的偏置电阻 ?简化电路设计 ?减少了部件数量和制造工艺 ?互补RN2961~RN2966 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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