RN4604 VD 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V/50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
Q1基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
Q2基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
直流电流增益hFE
DC Current Gain(hFE) |
80 |
截止频率fT
Transtion Frequency(fT) |
200MHz/250MHz |
耗散功率Pc
Power Dissipation |
300mW/0.3W |
Description & Applications |
Features ? TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ? Includeing two devices in SM6 (super mini type with 6 leads) ? With built-in bias resistors ? Simplify circuit design ? Reduce a quantity of parts and manufacturing process Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
描述与应用 |
特点 ?东芝晶体管的硅PNP外延型硅NPN外延型(PCT工艺)(PCT工艺) ?包括,两台设备SM6(超迷你型6引线) ?内置偏置电阻 ?简化电路设计 ?减少了部件数量和制造工艺 应用 ?开关,逆变电路,接口电路和驱动器电路应用 |
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