SI3801DV O1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-2.3A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
400m?@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.6V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
Bi-Directional P-Channel MOSFET/Battery Switch Feature Low rSS(on) Symmetrical P-Channel MOSFET Rated for 2.5- to 12-V Operation Symmetrical 12-V Blocking (off) Voltage Solution for High-Side Battery Disconnect Switching (BDS) Supports Multiple Battery Applications Low Profile, Small Footprint TSOP-6 Package |
| 描述与应用 |
双向P沟道MOSFET/电池开关 特点 低RSS（上）对称的P沟道MOSFET 额定为2.5-12-V操作？ 12-V对称封锁（关闭）电压 解决高侧电池断开开关（BDS） 支持多种电池应用 薄型，占地面积小TSOP-6封装 |
| 技术文档PDF下载 |
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