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SI3865BDV 1AY 的参数 |
类型
Type |
高端开关 high-side |
输出数
Number of Outputs |
1 |
Rds (On) |
60mΩ |
内部开关
Internal Switch(s) |
有 YES |
电流限制
Current Limit |
2.9A |
电压 - 输入
Voltage - Input |
1.8V~8V |
Description & Applications |
Load Switch with Level-Shift ? 80-mr Low rDS(on) TrenchFET ? 1.8 to 8-V Input ? 1.5 to 8-V Logic Level Control ? Low Profile, Small Footprint TSOP-6 Package ? 3000-V ESD Protection On Input Switch, VON/OFF ? Adjustable Slew-Rate The Si3865DV includes a p- and n-channel MOSFET in a single TSOP- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as alevel-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3865DV operates on supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A. |
描述与应用 |
负荷开关电平转换 ?80-MR低RDS(ON)的TrenchFET? ?1.8到8 V输入 ?1.5到8-V逻辑电平控制 ?薄型,占地面积小TSOP-6封装 ?3000 V ESD保护输入开关,VON/ OFF ?可调摆率 SI3865DV包括TSOP封装在一个单一的一个p-和n-沟道MOSFET。低导通电阻的P通道的TrenchFET?是专为使用作为负载开关。 n-沟道,外部电阻器,可用于作为的alevel移位驱动的p-沟道负载开关。 n-沟道MOSFET具有内部的ESD保护和低至1.5-V可以由逻辑信号。 SI3865DV操作从1.8到8-V的供应线,并且可以驱动负载可达2.7 A。 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
SI3801DV |
O1 |
VISHAY |
05+ |
SOT-163/SOT23-6/TSOP-6 |
1000 |
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SI3812DV |
12 |
VISHAY |
04+ |
SOT-163/SOT23-6 |
2345 |
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SI3831DV |
31 |
VISHAY |
05+ |
SOT-163/SOT23-6/TSOP-6 |
15 |
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SI3865BDV |
1AY |
VISHAY |
06+nopb |
SOT-163 |
0 |
电源管理ICPower Management IC/PMIC-电源分配开关Power Distribution Switche |
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SI3865DV |
65 |
VISHAY |
05+ |
SOT-163 |
50 |
电源管理ICPower Management IC/PMIC-电源分配开关Power Distribution Switche |
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SI3831DV |
31 |
VISHAY |
5+ |
SOT-163/SOT23-6/TSOP-6 |
0 |
场效应管FET-复合场效应管Complex FET-MOSFET 双P沟道MOSFET Dual P-Channel |
查看 |
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