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SN74AUC1G00DCKR UAR 的参数 |
逻辑类型
Logic Type |
与非门 NAND Gate |
电路数
Number of Circuits |
1 |
输入数
Number of Inputs |
2 |
电源电压Vcc
Voltage - Supply |
0.8v~2.7v |
静态电流Iq
Current - Quiescent (Max) |
10uA |
输出高,低电平电流
Current - Output High, Low |
-9mA,9mA |
低逻辑电平
Logic Level - Low |
0.7v |
高逻辑电平
Logic Level - High |
1.7V |
传播延迟时间@Vcc,CL
Max Propagation Delay @ V, Max CL |
0.5nS @ 2.5v 30pF |
Description & Applications |
SINGLE 2-INPUT POSITIVE NAND GATE ; Available in the Texas Instruments ? Low Power Consumption, 10-μA Max I CC NanoFree? Package ? ±8-mA Output Drive at 1.8 V ? Optimized for 1.8-V Operation and Is 3.6-V I/O ? Latch-Up Performance Exceeds 100mA Per Tolerant to Support Mixed-Mode Signal JESD 78, Class II ? ESD Protection Exceeds JESD 22 Ioff Supports Partial-Power-Down Mode – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) ? Sub 1-V Operable – 1000-V Charged-Device Model (C101) ? Max t pd of 2.2 ns at 1.8 V |
描述与应用 |
单路2输入正与非门; 德州仪器低功耗,10μA最大I CC NanoFree?包装?±8 mA输出驱动在1.8 V ?1.8-V操作优化,并为3.6-VI/ O?闭锁性能超过100mA每 耐支持混合模式信号JESD78,II类 ?ESD保护超过JESD22 IOFF支持部分掉电模式 - 2000-V人体模型(A114-A) - 200-V机型号(A115-A) ?子1-V可操作 - 1000-V带电器件模型(C101) ?最大t PD为2.2 ns在1.8 V |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
SN74AUC1G00DCKR |
UAR |
TEXAS |
05+ |
SOT-353/SC70-5/SC-88A |
0 |
集成电路ICIntegrated Circuit(IC)-逻辑电路Logic circuit-逻辑门Gate |
查看 |
SN74AUC1G07DCKR |
UVR |
TEXAS |
05+NOPB |
SOT-353/SC-88A/SC70-5/TSSOP5 |
2800 |
集成电路ICIntegrated Circuit(IC)-逻辑电路Logic circuit-缓存与线路驱动器Buffer/Line Driver |
查看 |
SN74AUC1G08DCKR |
UEK |
TEXAS |
05+NOPB |
SOT-353/SC70-5/SC-88A |
800 |
集成电路ICIntegrated Circuit(IC)-逻辑电路Logic circuit-逻辑门Gate |
查看 |
SN74AUC1G08YZPR |
|
TEXAS |
05+nopb4k |
5-DSBGA/5-WCSP |
4580 |
集成电路ICIntegrated Circuit(IC)-逻辑电路Logic circuit-逻辑门Gate |
查看 |
SN74AUC1G07DCKR |
UVR |
TEXAS |
0623nopb |
SOT-353/SC-88A/SC70-5/TSSOP5 |
0 |
集成电路ICIntegrated Circuit(IC)-逻辑电路Logic circuit-缓存与线路驱动器Buffer/Line Driver |
查看 |
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