SST175-T1 S5H 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30 V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
30 V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
－7.0~－70.0mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
3.0~6.0V |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
P-Channel JFET SST175 Series FEATURE Fast Switching—tON: 25 ns Low Leakage: –10 pA Low Capacitance: 5 pF Low Insertion Loss BENEFITS Low Error Voltage High-Speed Analog Circuit Performance Negligible “Off-Error,” Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS Analog Switches Sample-and-Hold Normally “On” Switches Current Limiters |
| 描述与应用 |
P沟道JFET SST175系列 特点 快速开关：25纳秒 低漏：-10 PA 低电容：5 PF 低插入损耗 好处 误差电压低 高速模拟电路性能 良好的频率响应 无需额外的缓冲 应用 模拟开关 采样和保持 通常情况下开关是“开”状态 电流限制器 |
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