SST4416-T1 H1 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-30v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
5~15ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-6v |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
?N–Channel JFETs ?Excellent High-Frequency Gain:400 MHz ?Very Low Noise: 3 dB (typ) @400 MHz ?Very Low Distortion ?High AC/DC Switch Off-Isolation |
| 描述与应用 |
?N沟道JFETs ?优秀的高频增益：400兆赫 ?非常低的噪音3分贝（典型值）@400 MHz的 ?非常低的失真 ?高AC / DC开关关断隔离 |
| 技术文档PDF下载 |
在线阅读  |
