SUT483J 3X 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/-150mA |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/-300mV |
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? Epitaxial planar NPN/PNP silicon transistor ? Small package save PCB area ? Reduce quantity of parts and mounting cost ? Both 2SA1980 chip and 2SC5343 chip in SOT-363 package |
| 描述与应用 |
特点 ?外延平面NPN/ PNP硅晶体管 ?小包装节省PCB面积 ?减少部件数量和安装成本 ?双方2SA1980芯片和SOT-363封装的2SC5343芯片 |
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