TBB1004DMTL DM 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
6V/6V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
6V/6V |
| 最大漏极电流Id
Drain Current |
21mA/24mA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
m?@ VGS = -V, ID = -mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
V |
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features ? Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. ? Suitable for World Standard Tuner RF amplifier. ? Very useful for total tuner cost reduction. ? Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. ? Provide mini mold packages; CMPAK-6 |
| 描述与应用 |
双床内置偏置电路MOS FET的IC VHF/ UHF射频放大器 特点 ?小SMD封装CMPAK-6内置双BBFET;要降低零部件的成本与PC板空间。 ?适用于世界标准调谐器RF放大器。 ?总的调谐器成本降低非常有用的。 ?耐ESD;内置ESD吸收二极管。承受高达200V在C = 200pF，Rs = 0条件。 ?提供微型模具包CMPAK-6 |
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