TPC6005 S2E 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
最大漏极电流Id
Drain Current |
6A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.028Ω/Ohm @3A,10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.5-1.2V |
耗散功率Pd
Power Dissipation |
2.2W |
Description & Applications |
Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RS (ON) = 21 m? (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) |
描述与应用 |
笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS(ON)= 21mΩ(典型值) 高正向转移导纳:| YFS|=10 S(典型值) 低漏电流:IDSS= 10μA(最大值)(VDS= 30 V) 增强模式:VTH =0.5?1.2 V(VDS=10 V,ID=200μA) |
技术文档PDF下载 |
在线阅读 |