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UM6K1
 型号:  UM6K1
 标记/丝印/代码/打字:  K1
 厂家:  ROHM
 封装:  SOT-363/SC70-6/UMT6
 批号:  05+
 库存数量:  0
 所属分类:  场效应管FET
  复合场效应管Complex FET
    MOSFET 双N沟道MOSFET Dual N-Channel
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UM6K1 K1 的参数

最大源漏极电压Vds Drain-Source Voltage 30V
最大栅源极电压Vgs(±) Gate-Source Voltage 20V
最大漏极电流Id Drain Current 100mA/0.1A
源漏极导通电阻Rds Drain-Source On-State Resistance 8?@ VGS = 4V, ID = 10mA
开启电压Vgs(th) Gate-Source Threshold Voltage 0.8~1.5V
耗散功率Pd Power Dissipation 150mW/0.15W
Description & Applications Small switching (30V, 0.1A) Features: 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. Applications: Interfacing, switching (30V, 100mA) Structure: Silicon N-channel MOSFET
描述与应用 小开关(30V,0.1A) 特点: 1)两个2SK3018晶体管UMT在一个单一的封装中。 2)安装成本和面积可减少一半。 3)低导通电阻。 4)低电压驱动(2.5V)使该器件理想用于 ???便携式设备。 5)轻松设计的驱动电路。 应用范围: 接口,开关(30V,100mA的) 结构: 硅N沟道 MOSFET
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