UPA828TF R86 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
5V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
3V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
11000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~140 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
180mW |
| Description & Applications |
Features ? HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 2SC5184) THIN-TYPE SMALL MINI MOLD ? Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz ? 6-pin thin-type small mini mold package adopted ? Built-in 2 transistors (2 u 2SC5184) |
| 描述与应用 |
特点 ?高频低噪声放大器 双晶体管NPN硅外延（带内置6-PIN22SC5184）超薄型小型迷你模具 ?低噪音 NF= 1.3 dB（典型值）。 @ VCE= 2 V，IC =3毫安，F =2吉赫 NF= 1.3 dB（典型值）。 @ VCE= 1 V，IC =3毫安，F =2吉赫 ?小型微型6引脚薄型型采用的模具包 ?内置2个晶体管（2 U2SC5184） |
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