UPA840TC-T1 89 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V/20V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V/10V |
集电极连续输出电流IC
Collector Current(IC) |
30mA/65mA |
截止频率fT
Transtion Frequency(fT) |
12000MHz/7000MHz |
直流电流增益hFE
DC Current Gain(hFE) |
75~150/70~150 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
230mW |
Description & Applications |
Features ? NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE ? Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA ? High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 12.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA ? Flat-lead 6-pin thin-type ultra super minimold package ? Built-in 2 different transistors (2SC5010, 2SC5007) |
描述与应用 |
特点 ?NPN硅外延晶体管(带2个不同的元素)在一台牵头的6引脚薄型超超minimold包装 ?低噪音 Q1:NF=1.5 dB(典型值)。 @ F =2 GHz时,VCE=3 V,IC= 3毫安 Q2:NF=1.4 dB(典型值)。 @ F =1 GHz时,VCE=3 V,IC= 7毫安 ?高增益 Q1:S21E|2=8.5 dB(典型值)。 @ F =2 GHz时,VCE=3 V,IC=10毫安 Q2:S21E|2=12.0 dB典型值。 @ F =1 GHz时,VCE=3 V,IC= 7毫安 6针扁平引线超薄型超超minimold包装 ?内置2个不同的晶体管(2SC5010,2SC5007) |
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