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USF5J49 F5J49 的参数 |
| 反向重复峰值电压VRRM/断态重复峰值电压VDRM
Repetitive peak reverse voltage/Repetitive peak off-state voltage |
600V |
| 通态平均电流IT(AV)
Average on-state current |
5A |
| 通态最大电流IT(RMS)
RMS on-state current |
7.8A |
| 栅极触发电压VGT
Gate trigger voltage |
0.8V |
| 栅极触发电流IGT
Gate trigger current |
3μA-70μA |
| 保持电流IH
Holding current |
2.5mA |
| 峰值通态电压VTM
On-state voltage |
1.6V |
| 重复峰值断态电流IDRM
Repetitive peak off-state current |
20μA |
| 浪涌电流ITSM(50Hz、60Hz)
Current - Non Rep. Surge 50, 60Hz (Itsm) |
65A |
| Description & Applications |
THYRISTOR SILICON PLANAR TYPE Medium Power Control Applications Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 μA |
| 描述与应用 |
晶闸管硅平面型 中等功率控制应用 重复峰值断态电压：VDRM=400，600 V 反向重复峰值电压VRRM=400，600 V 平均通态电流IT（AV）=5 A 门极触发电流：IGT= 70μA |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| USF05G49 |
PA |
TOSHIBA |
09+ROHS |
SOT-89 |
0 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
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| USF05G49 |
PA |
TOSHIBA |
09+ROHS1KM |
SOT-89 |
4400 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
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| USF5J49 |
F5J49 |
TOSHIBA |
05+ |
SOT-252 |
0 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
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| USFB13 |
A3 |
KEC |
06NOPB |
SOD323/SC-76/USC/0805 |
600 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
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| USFB13L |
BB |
KEC |
10+NOPB |
SOD323/SC-76/USC/0805 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
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| USF5G49 |
F5G49 |
TOSHIBA |
08NOPB |
TO-252 |
2000 |
可控硅/晶闸管Triac/Thyristor,SCR-其它Other |
查看 |
| USFB13L |
BB |
KEC |
10+rohs |
SOD323/SC-76/USC/0805 |
0 |
二极管Diodes-肖特基势垒二极管SBDSchottky Barrier Diodes-单管Single |
查看 |
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