XN2401 7R 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
80MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
160~460 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-300mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? Silicon PNP epitaxial planer transistor ? Two elements incorporated into one package.(Base-coupled transistors) ? Reduction of the mounting area and assembly cost by one half. Applications ? For general amplification |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?硅PNP外延刨刀晶体管的 ?两个要素纳入一包装（基地耦合晶体管）。 ?减少安装面积和汇编一半的费用。 应用 ?对于一般的放大 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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