XN2501 5W 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~460 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? Silicon NPN epitaxial planer transistor ? Two elements incorporated into one package.(Base-coupled transistors) ? Reduction of the mounting area and assembly cost by one half. Applications ? For general amplification |
| 描述与应用 |
特点 ?硅NPN外延刨刀晶体管的 ?两个要素纳入一包装（基地耦合晶体管）。 ?减少安装面积和汇编一半的费用。 应用 ?对于一般的放大 |
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