XP6213 8W 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features ? Silicon NPN epitaxial planer transistor ? Two elements incorporated into one package.(Emitter-coupled transistors with built-in resistor) ? Reduction of the mounting area and assembly cost by one half. ? For switching/digital circuits |
| 描述与应用 |
特点 ?硅NPN外延刨刀晶体管的 ?两个要素纳入一包装（发射极耦合晶体管内置电阻）。 ?减少安装面积和汇编一半的费用。 ?对于开关/数字电路 |
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