ZUMT619TA T63 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
1A |
截止频率fT
Transtion Frequency(fT) |
215MHz |
直流电流增益hFE
DC Current Gain(hFE) |
450 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
160mV/0.16V |
耗散功率Pc
Power Dissipation |
500mW/0.5W |
Description & Applications |
Super323? SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR * 500mW POWER DISSIPATION * IC CONT 1A * 2A Peak Pulse Current * Excellent HFE Characteristics Up To 2A (pulsed) * Extremely Low Equivalent On Resistance; RCE(sat) |
描述与应用 |
Super323?SOT323 NPN硅功率 (开关)晶体管 *500mW的功耗 * CONT IC1A *2A峰值脉冲电流 |
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