HMBT2907A K2F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?60V |
| 集电极连续输出电流IC
Collector Current(IC) |
?600mA/- 0.6A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1.6V |
| 耗散功率Pc
PoWer Dissipation |
225mW/0.225W |
| Description & Applications |
PNP epitaxial planar transistor Description The HMBT2907A is designed for general purpose amplifier and high speed switching, medium power switching applications. Features ? Low Collector Saturation Voltage ? High Speed Switching ? Complementary toHMBT2222A |
| 描述与应用 |
PNP外延平面晶体管 描述 HMBT2907A为通用放大器和高速切换，中等功率开关应用而设计的。 特点 ?低集电极饱和电压 ?高速开关 ?互补型toHMBT2222A |
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