mmbt2222aw P12 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
75V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
40V |
| 集电极连续输出电流IC
Collector Current(IC) |
600mA/0.6A |
| 截止频率fT
Transtion Frequency(fT) |
300Mhz |
| 直流电流增益hFE
DC Current Gain(hFE) |
75~375 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
0.3V~1V |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
These transistors are designed for general purpose amplifier applications. They are housed in the SOT?323/SC?70 package which is designed for low power surface mount applications. Features ? Pb?Free Package is Available |
| 描述与应用 |
这些晶体管是专为通用放大器 的应用程序。他们被安置SOT-323/SC-70包 是专为低功率表面贴装应用。 特点 ?无铅包装是可用 |
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