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AAT7551IJS-T1
 型号:  AAT7551IJS-T1
 标记/丝印/代码/打字:  KDG
 厂家:  ANALOGIC
 封装:  SC70JW-8
 批号:  04+
 库存数量:  1921
 所属分类:  场效应管FET
  复合场效应管Complex FET
    MOSFET 双P沟道MOSFET Dual P-Channel
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AAT7551IJS-T1 KDG 的参数

最大源漏极电压Vds Drain-Source Voltage -20V
最大栅源极电压Vgs(±) Gate-Source Voltage 12V
最大漏极电流Id Drain Current -2.7A
源漏极导通电阻Rds Drain-Source On-State Resistance 0.14?@ VGS = -2.5V, ID = -2.0A
开启电压Vgs(th) Gate-Source Threshold Voltage -0.6V
耗散功率Pd Power Dissipation 1.2W
Description & Applications P-Channel Power MOSFET General Description The AAT7551 is dual low threshold 20V, dual P-Channel MOSFET is a member of AnalogicTech's TrenchDMOS product family. Using an ultra-high density proprietary TrenchDMOS technology the AAT7551 is designed for use as a load switch in battery powered applications and protection in battery packs. Applications ? Battery Packs ? Battery-powered portable equipment ? Cellular and Cordless Telephones
描述与应用 P沟道功率MOSFET 概述 AAT7551双低阈值20V,双P沟道MOSFET AnalogicTech的TrenchDMOS产品系列的成员。使用一个超高密度的专有TrenchDMOS技术AAT7551是专为使用作为负载开关 在电池组中电池供电的应用和保护。 应用 ?电池组 ?电池供电的便携式设备 ?蜂窝和无绳电话
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