2SC5807 AR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
5A |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率Pc
Power Dissipation |
500mW/0.5W |
| Description & Applications |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION 2SC5807 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. FEATURE ●High collector current IC=5A ●Small collector to Emitter saturation voltage VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA) ●High collector dissipation PC=500mW APPLICATION For storobe ,DC/DC convertor,power amplify apprication |
| 描述与应用 |
低频放大应用 硅NPN外延型 说明 ??2SC5807 NPN外延硅晶体管。 它设计有高集电极电流和集电极耗散高。 特写 ●高集电极电流IC= 5A ●小集电极到发射极饱和电压 ????VCE（饱和）= 0.25V TYP。 （@ IC=4A，IB=100毫安） ●高集电极耗散PC=500MW 应用 对于storobe，DC/ DC转换器，功率放大apprication |
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