2SK3783 BH 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.21~0.35ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.37~-1v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?Silicon N-Channel Junction FET ?High gain ?0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k?) ? Low noise ?109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 k?) t = 0.3 mm TYP. |
| 描述与应用 |
?硅N沟道结型场效应管 ?高增益 -0.5分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ的） ?低噪音 -109分贝（VDS=2.0 V，C =5 pF的，RL=2.2kΩ上） ?T =0.3毫米TYP。 |
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