2SA2021E01JN 3E 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
| 集电极连续输出电流IC
Collector Current(IC) |
?100mA/-0.1A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
100mW/0.1W |
| Description & Applications |
PNP Silicon epitaxial planar type For general amplification Complementary to 2SC5609 Features ? High foward current transfer ratio hFE ? SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
PNP硅外延平面型 对于一般的放大 互补型2SC5609 特点 ?高电流传输比HFE FOWARD ?SSS迷你型封装，允许裁员和通过磁带包装设备和自动插入变薄 |
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