2SC5846G0L 7K 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
180~390 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Silicon NPN epitaxial planar type general amplification ■ Features ? High forward current transfer ratio hFE ? SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
NPN硅外延平面型 ?一般的放大 ■特点 ?高正向电流传输比HFE ?SSS迷你型封装，允许减小和变薄带包装的设备，通过自动插入 |
| 技术文档PDF下载 |
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