ISA1603AMI TQ 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?50V |
集电极连续输出电流IC
Collector Current(IC) |
?200mA/-0.2A |
截止频率fT
Transtion Frequency(fT) |
200MHz |
直流电流增益hFE
DC Current Gain(hFE) |
120~270 |
管压降VCE(sat)
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
耗散功率Pc
PoWer Dissipation |
150mW/0.15W |
Description & Applications |
PNP epitaxial planar transistor FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ●Small collector to emitter saturation voltage. ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application. |
描述与应用 |
PNP外延平面晶体管 对于低频放大应用 特写 ●小集电极到发射极饱和电压。 ●直流前锋出色的线性度获得。 ●超小型封装,便于安装 应用 对于混合集成电路,小型机低频电压放大应用。 |
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