ZXM61N02FTA n02 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
1.7A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
|
| 耗散功率Pd
Power Dissipation |
625mW/0.625W |
| Description & Applications |
V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES ? Low on-resistance ? Fast switching speed ? Low threshold ? Low gate drive ? SOT23 package |
| 描述与应用 |
V（BR）DSS =20V; RDS（ON）=0.18V，ID=1.7A 说明 Zetex的新一代高密度的MOSFET采用了独特??的 结构，结合快速开关的低导通电阻的好处 速度。这使得它们成为理想的高效率，低电压，功率 管理应用程序。 ?低导通电阻 ?开关速度快 ?低门槛 ?低栅极驱动器 ?SOT23封装 |
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