RT3N11M N11 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
50 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features ? Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type ? Silicon epitaxial type ? Each transistor elements are independent. ? Mini package for easy mounting Applications ? Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?复合开关应用硅外延型晶体管，电阻 ?硅外延型 ?每个晶体管的元素是独立的。 ?易于安装的小型封装 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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