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H2N7002 702 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
2.5v |
最大漏极电流Id
Drain Current |
200mA/0.2A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
2.8Ω/Ohm 50mA,5V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.375V |
耗散功率Pd
Power Dissipation |
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Description & Applications |
N-Channel MOSFET (60V, 0.2A) |
描述与应用 |
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技术文档PDF下载 |
在线阅读 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
H2N7002XIT1 |
025Y |
HI-SINCERITY |
05+ |
SOT-23/SC-59 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
LL1005-FH2N7S |
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TOKO |
06+ |
0402-2N7 |
0 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1005-FH2N7S |
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TOKO |
05+ |
0402-2N7 |
157000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1005-FH2N7S |
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TOKO |
05+ |
0402-2N7 |
0 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
LL1608-FH2N7S |
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TOKO |
05+ |
0603-2N7 |
7000 |
电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer |
查看 |
H2N7002 |
702 |
HI-SINCERITY |
05+ |
SOT-23/SC-59 |
3000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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