BFR92ALT1 P2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
25mA |
| 截止频率fT
Transtion Frequency(fT) |
4.5Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
40 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
273mW/0.273W |
| Description & Applications |
RF & MICROWAVE TRANSISTORS The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. |
| 描述与应用 |
RF与微波晶体管 BFR92ALT1是一款低噪声，高增益，坐落在低成本塑料封装的的离散硅双极晶体管。 |
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