ECH8616 FJ 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
60V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
3A |
源漏极导通电阻Rds
Drain-Source On-State Resistance |
133m?@ VGS = 4V, ID = 0.5A |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
1.2~2.6V |
耗散功率Pd
Power Dissipation |
1.3W |
Description & Applications |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-Speed Switching Applications Features ? Ultrahigh-speed switching. ? 4V drive. ? Composite type, facilitating high-density mounting |
描述与应用 |
N-沟道硅MOSFET 通用开关设备应用 超高速开关应用 特点 ?超高速开关。 ?4V驱动器。 ?复合型,促进高密度安装。 |
技术文档PDF下载 |
在线阅读 |