RN2102FS U1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-20V |
| 集电极连续输出电流IC
Collector Current(IC) |
-50mA |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
60 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.05W/50mW |
| Description & Applications |
Features ?Transistor Silicon PNP Epitaxial Type (PCT Process) ?Bias Resistor built-in Transistor ?Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. ?Complementary to RN1101FS~RN1106FS Applications ?Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 |
特点 ?晶体管的硅PNP外延型（PCT工艺） ?内置偏置电阻晶体管 ?将偏置电阻晶体管，减少了部件数量。减少零件数，使制造更加紧凑的设备和节省组装成本。 ?互补RN1101FS的?RN1106FS 应用 ?开关，逆变电路，接口电路和驱动器电路应用 |
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