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CR05AS-4-C-T1 CB 的参数 |
| 反向重复峰值电压VRRM/断态重复峰值电压VDRM
Repetitive peak reverse voltage/Repetitive peak off-state voltage |
400V |
| 通态平均电流IT(AV)
Average on-state current |
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| 通态最大电流IT(RMS)
RMS on-state current |
0.8A |
| 栅极触发电压VGT
Gate trigger voltage |
0.62V |
| 栅极触发电流IGT
Gate trigger current |
40μA |
| 保持电流IH
Holding current |
0.5mA |
| 峰值通态电压VTM
On-state voltage |
1.7V |
| 重复峰值断态电流IDRM
Repetitive peak off-state current |
10μA |
| 浪涌电流ITSM(50Hz、60Hz)
Current - Non Rep. Surge 50, 60Hz (Itsm) |
10A |
| Description & Applications |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 800 V On?State Current Rating of 0.8 Amperes RMS at 80°C High Surge Current Capability — 10 A Glass-Passivated Surface for Reliability and Uniformity |
| 描述与应用 |
敏感栅 可控硅整流器 反向阻断晶闸管 敏感的门允许微控制器和其他逻辑电路的触发 阻断电压为800 V 80℃时，通态电流额定值为0.8A有效值 高浪涌电流能力 - 10 A 玻璃表面钝化的可靠性和一致性 |
| 技术文档PDF下载 |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| CR05AS-4-A |
CB |
MITSUBISHI |
05+ |
SOT-89 |
0 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
| CR05AS-4-A |
CB |
MITSUBISHI |
04+ |
SOT-89 |
2159 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
| CR05AS-4-BT1 |
CB |
MITSUBISHI |
05+ |
SOT-89 |
4100 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
| CR05AS-4-BT1 |
CB |
MITSUBISHI |
05+ |
SOT-89 |
2000 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
| CR05AS-4-A |
CB |
MITSUBISHI |
05+ |
SOT-89 |
3900 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
| CR05AS-4-C-T1 |
CB |
MITSUBISHI |
05+ |
SOT-89 |
1000 |
可控硅/晶闸管Triac/Thyristor,SCR-单向可控硅Thyristor,SCR |
查看 |
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