DTC115GM K29 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
|
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
100KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
82 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input,and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved. |
| 描述与应用 |
特性 1）内置偏置电阻组成的薄膜电阻 完全隔离，允许负偏置输入和寄生效应几乎完全消除。 2）只有开/关条件需要设置操作，使装置的设计容易。 3）高密度安装，就可以实现。 |
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