BFQ17 FA 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
1.5GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
1W |
| Description & Applications |
NPN 1 GHz wideband transistor DESCRIPTION NPN transistor in a SOT89 plastic envelope intended for application in thick and thin-film circuits. The transistor has extremely good intermodulation properties and a high power gain. |
| 描述与应用 |
1 GHz的宽带晶体管NPN 说明 为SOT89塑料外壳，用于在厚薄膜电路的NPN晶体管。该晶体管具有极其良好的互调性能和高功率增益。 |
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