MMBT2369 1J 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
200mA/0.2A |
| 截止频率fT
Transtion Frequency(fT) |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
40~120 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV~500mV |
| 耗散功率Pc
Power Dissipation |
225mW/0.225W |
| Description & Applications |
NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. |
| 描述与应用 |
NPN开关晶体管 该设备是专为高速饱和开关集电极 10 mA至100 mA的电流 |
| 技术文档PDF下载 |
在线阅读  |
