MMBFJ175 GW 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-30 V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage |
30 V |
漏极电流(Vgs=0V)IDSS
Drain Current |
-7.0~-60.0mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage |
3.0~6.0V |
耗散功率Pd
Power Dissipation |
225mW/0.225W |
Description & Applications |
MMBFJ175 P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. |
描述与应用 |
MMBFJ175 P沟道开关 此设备是专为低电平模拟开关采样和保持电路和斩波稳定放大器。来源于工艺88。 |
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