MMBT6427 1V 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-EmitterVoltage(VCEO) |
40V |
| 集电极连续输出电流IC
Collector Current(IC) |
1.2A |
| 截止频率fT
Transtion Frequency(fT) |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
140000 @ 5V,0.5A |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
1.5V |
| 耗散功率Pc
Power Dissipation |
350mW/0.35W |
| Description & Applications |
? This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. |
| 描述与应用 |
?为需要集电流增益可达到1A而设计 |
| 技术文档PDF下载 |
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