BC848CW 1L 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
30V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
420~800 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200~600 mV |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. |
| 描述与应用 |
这些晶体管是专为通用放大器应用。他们被安置在SOT-323/SC-70这是专为低功率表面贴装应用。 |
| 技术文档PDF下载 |
在线阅读  |
