EC4A01TF-4-B-TR-H V 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.14~0.24ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~-1.2v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?N-Channel Silicon Junction FET Features ? Ultrasmall (1006 size), thin (0.35mm) leadless package. ? Especially suited for use in condenser microphone for audio equipments and telephones. ? Excellent voltage characteristic. ? Excellent transient characteristic. ? Adoption of FBET process. |
| 描述与应用 |
?N沟道硅结型场效应管 特点 ?超小（1006尺寸），薄（0.35毫米）无铅封装。 特别适合用于电容式麦克风的音频设备和电话。 ?优秀的电压特性。 ?出色的瞬态特性。 ?通过过程FBET。 |
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