AON2801L 2801 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
-3A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
160m?@ VGS = -1.8V,ID = -1.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.3~-1V |
| 耗散功率Pd
Power Dissipation |
1.5W |
| Description & Applications |
Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON2801/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AON2801 and AON2801L are electrically identical. -RoHS Compliant -AON2801L is Halogen Free |
| 描述与应用 |
双P沟道增强型场效应晶体管 概述 AON2801/ L，采用先进的沟槽技术，提供出色的RDS（ON），低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 AON2801和AON2801L是电动相同。 符合RoHS标准 AON2801L是无卤 |
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